Steric origin of the silicon-oxygen-silicon angle distribution in silica
- 1 December 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12), 8615-8619
- https://doi.org/10.1063/1.330458
Abstract
The oxygen-oxygen separation distance between adjacent tetrahedra in silica has been considered as a restrictive criterion for the formation of accepted structures. The single stipulation of a minimum O-O separation of say 2.9 Å leads to a distribution of the Si-O-Si angle with a maximum at about 145° and cutoffs near 120° on the low end and 180° on the high end of the scale, all in excellent agreement with the experimental observations for silica. No detailed energetic considerations are involved.Keywords
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