The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (4), 175-177
- https://doi.org/10.1109/55.75755
Abstract
The authors report the use of rapid thermal reoxidized nitrided thin ( approximately 90-AA) gate oxides in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs. Although lightly nitrided gate oxides are unable to block the boron penetration, reoxidized nitrided gate oxides are found to have excellent barrier properties against boron penetration. In addition, excellent electrical characteristics in terms of device subthreshold conduction and transconductance are illustrated.<>Keywords
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