Interface-mediated pairing in field effect devices
- 21 March 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 71 (10), 104510
- https://doi.org/10.1103/physrevb.71.104510
Abstract
We consider the pairing induced in a strictly two-dimensional electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.
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