Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing
Home
Publications
Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing
Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing
DT
D. Tchikatilov
D. Tchikatilov
YY
Y. F. Yang
Y. F. Yang
EY
E. S. Yang
E. S. Yang
Open Access
Publisher Website
Google Scholar
Add to library
Cite
Download
Share
Download
Download
Download PDF
Download
21 October 1996
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 69
(17)
,
2578-2580
https://doi.org/10.1063/1.117705
Abstract
The influence of low-temperature annealing in H2O vapor on electron-cyclotron-resonance (ECR) grown SiGe oxides is reported. Annealing the oxides in H2O vapor at 280°C for 3 h 20 min, applied after annealing in forming gas at 450°C for 30 min, has several important effects: It reduces oxide leakage current by up to four orders of magnitude, decreases the density of interface states, and results in a low fixed oxide charge density of - 5.0× 1010 cm-2 in comparison to those of the films subjected to annealing in forming gas only. In addition, higher cumulative dielectric breakdown fields up to 8 MV/cm have been achieved. From the results obtained it is evident that vapor annealing is beneficial for ECR-grown SiGe oxides. © 1996 American Institute of Physics.published_or_final_versio
Keywords
RESONANCE
CYCLOTRON
H2O VAPOR
GROWN SIGE OXIDES
VAPOR ANNEALING
All Articles
Open Access
Cited by 20 articles