Silicide and Schottky barrier formation in the Ti-Si and the Ti-SiOx -Si systems
- 1 September 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9), 6308-6315
- https://doi.org/10.1063/1.331551
Abstract
Silicide and Schottky barrier formation has been characterized for Ti deposited on the Si(100) surface, both with and without surface oxides present. Reactions were carried out in ultrahigh vacuum, while observing electronic and chemical changes with ultraviolet photoemission spectroscopy and Auger electron spectroscopy. Ti deposited on Si shows a sharp interface, no change in Fermi level position, and no silicide formation until heated to 400–500 °C. Ti deposited on thin oxides (x forms near the surface. This differing behavior of thin and thick oxides is shown to be consistent with bulk thermodynamic data.Keywords
This publication has 11 references indexed in Scilit:
- Absence of band-gap surface states on clean amorphous siliconPhilosophical Magazine Part B, 1981
- Reactive Schottky barrier formation: The Pd/Si interfaceJournal of Vacuum Science and Technology, 1980
- Ultraviolet photoemission and low-energy-electron diffraction studies of Ti(rutile) (001) and (110) surfacesPhysical Review B, 1979
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- Reaction of thin metal films with SiO2 substratesSolid-State Electronics, 1978
- Electron spectroscopy studies of the chemisorption of O2, H2 and H2O on the TiO2(100) surfaces with varied stoichiometry: Evidence for the photogeneration of Ti+3 and for its importance in chemisorptionSurface Science, 1978
- Adsorption of oxygen at room temperature on polycrystalline titanium studied by ultraviolet and X‐ray photoelectron spectroscopyPhysica Status Solidi (b), 1977
- Photoemission study of the effect of bulk doping and oxygen exposure on silicon surface statesPhysical Review B, 1974
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Photoemission energy level measurements of sorbed gases on titaniumSolid State Communications, 1972