A model for the current—Voltage characteristics of MODFET's

1 May 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (5), 673-676
https://doi.org/10.1109/t-ed.1986.22550

Abstract

A model for theI-Vcharacteristics of MODFET's is presented. In this paper, an analytic velocity-field model is used. To more accurately describe the physical characteristics of MODFET's, the model of this paper is divided into two regions (the linear region and the saturation region), being continuous at the pinchoff voltage, and includes the diffusion component in addition to the drift component of current. Using this model, the simulatedI-Vcharacteristics are in excellent agreement with the experimental data.

Keywords

FIELD EFFECT TRANSISTOR
ELECTRONS
ELECTRODES
VELOCITY FIELD
CURRENT DENSITY
POTENTIAL WELL
VOLTAGE
SCHOTTKY DIODE
SEMICONDUCTOR DEVICES
POISSON EQUATION
ENERGY GAP
GALLIUM ARSENIDE

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