An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs1-xPx
- 1 February 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (2R)
- https://doi.org/10.1143/jjap.25.231
Abstract
Extended X-ray-absorption fine-structure measurements were performed on GaAs1-x P x , a typical III-V-V type semiconductor alloy, with the composition x as a parameter. The results reveal that the Ga-As and Ga-P nearest-neighbor bond lengths differ, showing a tendency to retain their respective bond lengths in the binary compounds. This feature is similar to that found earlier in Ga1-x In x As, a III-III-V type alloy.Keywords
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