Current Transport in Al/InAlAs/InGaAs Heterostructures
- 16 July 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (1), 251-260
- https://doi.org/10.1002/pssa.2210720125
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Double heterostructure Ga0.47In0.53As MESFETs with submicron gatesIEEE Electron Device Letters, 1980
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969
- Field and thermionic-field emission in Schottky barriersSolid-State Electronics, 1966