A single 5V supply nonvolatile static RAM
- 1 January 1981
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XXIV, 148-149
- https://doi.org/10.1109/isscc.1981.1156162
Abstract
A completely TTL-compatible, single 5V supply, nonvolatile RAM utilizing a three-layer polysllicon process and a low-current floating-gate tunneling approach, will be described.Keywords
This publication has 2 references indexed in Scilit:
- Interface effects and high conductivity in oxides grown from polycrystalline siliconApplied Physics Letters, 1975
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969