Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation

Abstract

We have fabricated an aluminum single-electron transistor (SET) and characterized it at frequencies up to 700 kHz. The relatively high frequency was achieved by reducing the capacitance at the SET output. The SET was bonded to an InP high-electron-mobility transistor (HEMT), and biased through a small ($3\times {10}^{-4\mathrm{}}\frac{e}{\sqrt{\mathrm{Hz}}}$ at 10 kHz.