Resonance Raman scattering in III–V semiconductors and their alloys

Abstract

The resonances in the Raman cross section of InAs and several pseudobinary alloys of III–V compounds in the neighbourhood of the E₀ and E₁ gaps were investigated. The alloying technique was used to bring the gaps to the region where the lines of the Ar‐ion laser occur. The E₀‐Raman resonance shifts with temperature the same as the corresponding absorption gap, while a much smaller shift is exhibited by the E₁ resonance. These resonant gaps shift with alloy concentration less than the corresponding absorption gaps, a fact which seems to be a reflection of the more localized nature of the Raman scattering phenomenon. The LO phonon exhibits in the forbidden scattering configurations a strong resonance near E₁ at 77 °K. This resonance disappears rapidly as the temperature is increased.