Low-temperature electron mobility in InSb
- 1 August 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (8), 3621-3622
- https://doi.org/10.1063/1.324171
Abstract
Available experimental values of electron mobility in InSb samples with known impurity concentration are compared with the theoretical values obtained by an iteration technique including the effects of band nonparabolicity, wave-function admixture, electron screening, and all scattering mechanisms. Experimental values for the temperature range 20–77 K are found to agree to within 10% with the theoretical values. Values for conductivity mobility, the Hall ratio, and magnetoresistance are also given for different impurity concentrations and compensation ratios. These values should be useful for obtaining the impurity concentration from the knowledge of the experimental values of these transport coefficients.Keywords
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