Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (4), 180-182
- https://doi.org/10.1109/55.682
Abstract
Electrical characteristics of Al/yttrium oxide ( approximately 260 AA)/silicon dioxide ( approximately 40 AA)/Si and Al/yttrium oxide ( approximately 260 AA)/Si structures are described. The Al/Y/sub 2/O/sub 3//SiO/sub 2//Si (MYOS) and Al/Y/sub 2/O/sub 3//Si (MYS) capacitors show very well-behaved I-V characteristics with leakage current densityKeywords
This publication has 3 references indexed in Scilit:
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