Growth and characterization of compound semiconductors by atomic layer epitaxy
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3), 89-94
- https://doi.org/10.1016/0022-0248(86)90287-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substratesJournal of Crystal Growth, 1984
- Characterization of surface exchange reactions used to grow compound filmsApplied Physics Letters, 1981