Very low resistance ohmic contacts on p-type InP by direct plating

Abstract

Very low resistance ohmic contacts (ρ_c ≃4×10⁻⁵ Ω cm²) have been formed on p‐type InP by light assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, is suitable for producing patterned, small care contacts on device structures and is compatible with established n‐type ohmic contacting procedures.