Laser-induced damage to semiconductors
- 1 February 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (2), 215-224
- https://doi.org/10.1088/0022-3727/9/2/012
Abstract
An experimental study has been made of the damage to p-type silicon caused by a normal and a Q-switched ruby laser. For the normal laser irradiation, the crack-line formation was due to thermal stress. For the Q-switched laser irradiation, cracks extending into the volume of the crystal were produced at a high power density of about 350 MW cm-2. The damage threshold was almost independent of the mechanical damage depth and the ratio of the damage threshold for a mechanically lapped sample to that for a chemically polished one (IK/ID) was only about 1/2 approximately 1/3. The damage induced in GaP whose forbidden-band width is greater than the photon energy was also investigated.Keywords
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