Raman scattering in ultraheavily doped silicon
- 15 October 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (8), 5464-5467
- https://doi.org/10.1103/physrevb.32.5464
Abstract
Raman spectroscopy has been used to study compositional disorder in ultraheavily doped silicon. The disorder is characterized by line-shape asymmetry of the one-phonon mode and the scattering amplitude of the two-phonon transverse acoustic and transverse optic modes. For implantation doses exceeding the solubility limit, topological disorder also becomes important in determining the phonon correlation length.Keywords
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