Films deposited at an oblique angle-of-incidence of the vapor stream have frequently been observed to display an anisotropic structure because of preferential growth of the film material in the vapor direction. This phenomenon occurs on stationary substrates while, if the substrate is rotated during film fabrication, the vapor is deposited on all sides of a growing grain or island. If an integration is performed over the varying directions and amounts of the incident vapor, an “integrated incidence vector” can be calculated for planar substrates. Its direction should be that of average growth. It is calculated for which geometrical configuration (diameter and location of the substrate with respect to the source) this vector will be normal to the surface of the substrate, thus eliminating the angle-of-incidence effect. Then, the stress patterns in ZnS films on stationary and rotating substrates are discussed. It is shown that the pattern on stationary substrates is strongly affected by the angle-of-incidence while, on rotating substrates, no indication of incidence effects can be observed.