Aluminum Antimonide Thin Films by Coevaporation of the Elements

Abstract

Stoichiometric thin films of AlSb have been prepared by coevaporation of the elements onto glass substrates held at 550°C. Conductance activation energies of 0.17 and 0.29 eV were observed. Oxygen adsorption causes a level at 0.24 eV that dominates the conductance in air at room temperature. Space‐charge‐limited current flow was observed at room‐ and liquid‐nitrogen temperatures. The hole concentration and mobility in the layers are estimated at 10¹⁵ cm⁻³ and 1.5 cm²/V‐sec, respectively.