Perimeter-related current in high-field tunneling into SiO2
- 15 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4), 417-419
- https://doi.org/10.1063/1.96131
Abstract
The spatial distribution of the electric field in a metal-oxide-silicon structure with finite gate dimensions is calculated and used to determine the current expected in the Fowler–Nordheim tunneling regime. The theoretical analysis predicts a greatly enhanced perimeter current when the gate acts as the cathode. In contrast, the edge of the gate does not significantly influence the current when the silicon substrate acts as the cathode. Experimental results are in qualitative agreement with the above expectation.Keywords
This publication has 8 references indexed in Scilit:
- High Field Phenomena in Thermal SiO2Journal of the Electrochemical Society, 1985
- Electron trapping/detrapping within thin SiO2 films in the high field tunneling regimeJournal of Applied Physics, 1983
- Electrical breakdown of insulators by one-carrier impact ionizationJournal of Applied Physics, 1982
- On tunneling in metal-oxide-silicon structuresJournal of Applied Physics, 1982
- Electron tunneling at Al-SiO2 interfacesJournal of Applied Physics, 1981
- Tunneling of electrons from Si into thermally grown SiO2Solid-State Electronics, 1977
- Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969