InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy

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Abstract
InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 μm has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers.