Chemical Shifts of Acceptor Binding Energies andFactors in Si and Ge
- 18 May 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 24 (20), 1114-1116
- https://doi.org/10.1103/physrevlett.24.1114
Abstract
Chemical shifts of impurity binding energies and factors are explored within the framework of a modified effective-mass or wave-packet formalism. Magnitudes of the shifts are determined from band-defect energies, a crystallographic generalization of the quantum-defect method for spherical potentials. Good agreement with experiment is obtained for group-III acceptors in Si and Ge.
Keywords
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