Plasma-enhanced CVD: Oxides, nitrides, transition metals, and transition metal silicides

Abstract

Plasma-enhanced chemical vapor deposition (PECVD) of thin films has generated considerable interest in recent years. Much of this interest stems from the ability of high energy electrons in rf glow discharges (plasmas) to break chemical bonds and thereby promote chemical reactions at or near room temperature. Such considerations are particularly important when depositing films onto substrates which cannot withstand high temperatures. A further advantage, however, is that the highly reactive plasma atmosphere can result in the formation of materials with unique chemical, physical, and electrical properties. In this paper, the plasma-enhanced deposition of oxide, nitride, transition metal, and transition metal silicide films will be discussed. Emphasis will be placed upon the chemistry occurring in the glow discharge, and on the manner in which this chemistry controls the resulting film properties.