Electronic structure of oxygen in gallium phosphide
- 15 November 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (10), 6104-6106
- https://doi.org/10.1103/physrevb.28.6104
Abstract
There are, at present, two models concerning the electronic structure of GaP:O. One is based upon the results of one-electron Green's-function calculations; the other employs the defect-molecule concept and stresses the many-electron origin of the states of GaP:O. It is the purpose of this paper to show that the latter model is internally inconsistent and that its implications contradict the concensus of deep-level theory which has been established by recent quantitative studies.Keywords
This publication has 13 references indexed in Scilit:
- Electronic States of Oxygen in Gallium Phosphide, an Example of Weak BondingPhysical Review Letters, 1982
- Enfeebled oxygen bonding and metastability in GaP:OPhysical Review B, 1982
- Optical cross sections associated with deep levels in semiconductors. IJournal of Physics C: Solid State Physics, 1980
- Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in siliconPhysical Review B, 1980
- New self-consistent approach to the electronic structure of localized defects in solidsPhysical Review B, 1979
- Electronic states of silicon vacancy. I. Covalent statesPhysical Review B, 1978
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975
- Electron-Capture ("Internal") Luminescence from the Oxygen Donor in Gallium PhosphidePhysical Review B, 1968
- Jahn-Teller Effect for a Single Vacancy in Diamondlike Covalent SolidsPhysical Review B, 1967
- Colour centres in irradiated diamonds. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957