We present a kinetic study of ground state silicon atoms, Si[3p2(3PJ)]. The silicon atoms were generated by the repetitive pulsed irradiation of SiCl4 and monitored photoelectrically in absorption by time-resolved attenuation of resonance radiation of the group of lines at λ= 251.6 nm (43PJâ†� 33P0,1,2), coupled with signal averaging. Absolute rate constants, including those obtained in the previous study concerned with the development of the method itself, are reported for the molecules H2, N2, O2, Cl2, CO, NO, CO2, N2O, CH4, CF4, C2H2, C2H4 and SiCl4. The results are compared and discussed, where appropriate, with analogous data for the adjacent group IV atoms, C(23PJ) and Ge(43PJ). The nature of the potential surfaces involved in reactions of Si(33PJ) are assumed to be described following symmetry arguments based on the weak spin orbit coupling approximation.