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Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
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Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
SJ
So/Ren Jeppesen
So/Ren Jeppesen
MM
Mark S. Miller
Mark S. Miller
Dan Hessman
Dan Hessman
BK
Bernhard Kowalski
Bernhard Kowalski
Ivan Maximov
Ivan Maximov
Lars Samuelson
Lars Samuelson
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15 April 1996
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 68
(16)
,
2228-2230
https://doi.org/10.1063/1.115867
Abstract
No abstract available
Keywords
OPTICAL ACTIVITY
GALLIUM ARSENIDE
QUANTUM DOT
Cited by 94 articles