Growth of Thin Epitaxial CoSi2 Layers on Si(100)
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Control of pinholes in epitaxial CoSi2 layers on Si(111)Applied Physics Letters, 1988
- Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111)Applied Physics Letters, 1987
- Nucleation and Growth of Cosi2 on (001) and (111) SiMRS Proceedings, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Control of a natural permeable CoSi2 base transistorApplied Physics Letters, 1986
- INTERFACIAL DEFECTS AND EPITAXYMRS Proceedings, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Etching of SiO2 Films by Si in Ultra-High VacuumJapanese Journal of Applied Physics, 1982