This letter reports on the fabrication and characterization of visible‐blind ultraviolet photoconductors using single‐crystal AlxGa1−xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long‐wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 μm interelectrode spacing.