Nature of the lowest electron states in short period GaAs-AlAs superlattices of type II
- 30 June 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 70 (10), 945-949
- https://doi.org/10.1016/0038-1098(89)90634-0
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Short-period GaAs-AlAs superlattices: Optical properties and electronic structurePhysical Review B, 1988
- Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structuresPhysical Review B, 1988
- Optical properties and band structure of short-period GaAs/AlAs superlatticesJournal of Luminescence, 1987
- Γ-X mixing in GaAs/As and As/AlAs superlatticesPhysical Review B, 1987
- Effects of the layer thickness on the electronic character in GaAs-AlAs superlatticesApplied Physics Letters, 1987
- Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlatticesPhysical Review B, 1987
- X-point excitons in AlAs/GaAs superlatticesApplied Physics Letters, 1986
- Localized and delocalized two-dimensional excitons in GaAs-AlGaAs multiple-quantum-well structuresPhysical Review B, 1984
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Effect of Stress on the Donor Wave Functions in GermaniumPhysical Review B, 1962