Theory of Diluted Magnetic Semiconductor Ferromagnetism
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- 12 June 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 84 (24), 5628-5631
- https://doi.org/10.1103/physrevlett.84.5628
Abstract
We present a theory of carrier-induced ferromagnetism in diluted magnetic semiconductors ( ) which allows for arbitrary itinerant-carrier spin polarization and dynamic correlations. Both ingredients are essential in identifying the system's elementary excitations and describing their properties. We find a branch of collective modes, in addition to the spin waves and Stoner continuum which occur in metallic ferromagnets, and predict that the low-temperature spin stiffness is independent of the strength of the exchange coupling between magnetic ions and itinerant carriers. We discuss the temperature dependence of the magnetization and the heat capacity.
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This publication has 24 references indexed in Scilit:
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)SbPhysical Review B, 1999
- MagnetoelectronicsScience, 1998
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Magnetic measurements on the III-VI diluted magnetic semiconductor Ga1−xMnxSeJournal of Applied Physics, 1998
- Hall effect and magnetic properties of III–V based (Ga1−xMnx)As/AlAs magnetic semiconductor superlatticesJournal of Applied Physics, 1998
- Magnetotransport and magnetization properties of p-type , a new III - V diluted magnetic semiconductorJournal of Physics: Condensed Matter, 1997
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductorsPhysical Review Letters, 1992
- Carrier-concentration–induced ferromagnetism in PbSnMnTePhysical Review Letters, 1986