Electrical properties of InSb-based mixed crystal films
- 1 April 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (4), 1625-1630
- https://doi.org/10.1063/1.1662422
Abstract
High‐carrier‐mobility InSb‐based mixed crystal films, InAsxSb1−x (0<x 1−xGaxSb (0<x xSb1−x films exhibits a minimum of 0.16 eV at about 35 ∼ 37 mole% InAs. The transport properties of the mixed crystal films are both dominated by an unknown scattering process which decrases the electron mobility of InSb films at low temperatures.Keywords
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