Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
- 16 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (11), 1366-1368
- https://doi.org/10.1063/1.107484
Abstract
In this letter we report the first switched atomic layer epitaxy (SALE) of single crystalGaN over basal plane sapphire substrates. A low pressuremetalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band‐edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaNfilms which show excellent band‐edge photoluminescence.Keywords
This publication has 9 references indexed in Scilit:
- High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxyApplied Physics Letters, 1987
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973