Low-Energy Electron Diffraction Study of the Adsorption of Cesium on the (111) Surface of Si

Abstract

Low‐energy electron diffraction studies of the system Si(111)+Cs in the concentration range from zero to one monolayer of cesium have been made on freshly cleaved and on annealed samples of silicon at room temperature. The cleaved surfaces produce three ordered phases depending on coverage. The annealed clean surface (which is reconstructed) did not exhibit a characteristic ordered phase anywhere in the concentration range. Measurements of the dependence of work function on concentration and on desorption with increased temperature were correlated with photoelectric emission and work function measurements reported by Gobeli and Allen.