Ohmic contact and impurity conduction in P−doped CdTe

Abstract

Good Ohmic contacts to P−doped and undoped p−type CdTe have been obtained by evaporating Au or Pt on the surfaces in high vacuum (p−6 Torr) and firing these in a H₂ atmosphere. This contact has been used on the crystals having carrier concentrations between 3×10¹⁴ and 3×10¹⁷ cm⁻³ and stayed nearly Ohmic down to 4 °K. Consequently, temperature dependences of Hall coefficients and resistivities have been measured and an impurity conduction has been found in the P−doped CdTe.