Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped silicon
- 30 September 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (12), 1273-1276
- https://doi.org/10.1016/0038-1098(81)90225-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Room-temperature-stable, F_2^+-like center yields cw laser tunable over the 099–122-μm rangeOptics Letters, 1980
- Localized exciton bound to an isoelectronic trap in siliconPhysical Review B, 1980
- Observation of long lifetime lines in photoluminescence from Si: InSolid State Communications, 1979
- A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and TlJournal of Luminescence, 1977