Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells
- 20 August 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (8), 1130-1132
- https://doi.org/10.1063/1.1396315
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopyApplied Physics Letters, 2001
- Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric quantum-well structuresPhysical Review B, 2000
- Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fieldsApplied Physics Letters, 1999
- Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structuresApplied Physics Letters, 1998
- Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effectApplied Physics Letters, 1998
- Reduction of oscillator strength due to piezoelectric fields in quantum wellsPhysical Review B, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Photoluminescence of two-dimensional excitons in an electric field: Lifetime enhancement and field ionization in GaAs quantum wellsPhysical Review B, 1988
- Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark EffectPhysical Review Letters, 1985