Application of amorphous silicon field effect transistors in integrated circuits
- 1 October 1981
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 26 (2), 83-86
- https://doi.org/10.1007/bf00616653
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1981
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- Amorphous-silicon thin-film metal-oxide-semiconductor transistorsApplied Physics Letters, 1980
- Amorphous-silicon integrated circuitProceedings of the IEEE, 1980
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979
- An amorphous silicon thin film transistor: Theory and experimentSolid-State Electronics, 1976
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969