Electronic transport investigation of arsenic-implanted silicon. I. Annealing influence on the transport coefficients

Abstract

Ac and dc Hall-effect measurements, as a function of temperature and frequency, have been employed to characterize arsenic-implanted silicon films. A significant modification of the carrier scattering mechanism occurs for annealing temperature around 550 °C which is manifested as a drastic change in the behavior of the temperature and frequency dependence of the transport parameters. Finally, the experimental results are discussed with respect to transport models which take into account short- and long-range disorder, in order to help us understand the behavior of the implantation defects and inhomogeneities, and their thermal annihilation.