Anomalous Electrical Properties of p-Type Hg1−xCdxTe
- 1 February 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (2), 803-808
- https://doi.org/10.1063/1.1660097
Abstract
The temperature dependence of the Hall coefficient and resistivity is presented on samples which show an anomalous behavior and the effects of various surface treatments on the electrical properties is examined. The anomalous effects have been eliminated in a few cases by proper heat treatments yielding normal p‐type Hall coefficients down to 4.2°K. Field effect measurements confirm that these effects are due to an n‐type inversion layer on the surface of p‐type Hg0.8Cd0.2Te. Surface carrier concentration in this inversion layer ranges from 1×1012/cm2 to 5×1012/cm2 and mobility in this layer was found to be in the 103 cm2/V·sec range.Keywords
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