High-power superluminescent diodes
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (12), 2454-2457
- https://doi.org/10.1109/3.14376
Abstract
By inclining the active stripe of a planar AlGaAs double heterojunction structure by 5 degrees with respect to the facets, reflection feedback has been eliminated and high-power superluminescent diodes emitting 28 mW with less than 5% spectral modulation have been obtained.Keywords
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