Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
Top Cited Papers
- 3 January 2007
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 204 (1), 227-230
- https://doi.org/10.1002/pssa.200673567
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping densitySemiconductors, 2006
- High-power flip-chip blue light-emitting diodes based on AlGaInNSemiconductors, 2005
- Modelling study of MQW LED operationphysica status solidi (c), 2005
- Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wellsSemiconductors, 2003
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh ElectrodeJapanese Journal of Applied Physics, 2002
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics, 1999