GaInAsP/InP surface emitting injection laser with a ring electrode
- 1 October 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (10), 1117-1118
- https://doi.org/10.1109/jqe.1984.1072277
Abstract
-A GaInAsP/InP surface emitting injection laser (\lambda = 1.2 \mum) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved.Keywords
This publication has 3 references indexed in Scilit:
- GaInAsP/InP surface emitting injection lasers with short cavity lengthIEEE Journal of Quantum Electronics, 1983
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- GaInAsP/InP Surface Emitting Injection Laser with Buried HeterostructuresJapanese Journal of Applied Physics, 1981