Observation of a Non-Ohmic Hall Resistivity at Low Temperatures in a Two-Dimensional Electron Gas
- 2 February 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 46 (5), 360-363
- https://doi.org/10.1103/physrevlett.46.360
Abstract
Hall measurements of electron inversion layers at low temperatures and electric fields are reported. For resistances of ≲ 10 kΩ/□ a logarithmic dependence of the Hall coefficient on temperature and Hall voltage is observed. This indicates that the logarithmic dependences observed for the resistance of metal films and metal-oxide-semiconductor field-effect transistors are not evidence for the scaling theory of localization. These results are also difficult to resolve within the theory of interaction effects by Altshuler, Aronov, and Lee.Keywords
This publication has 9 references indexed in Scilit:
- Magnetoresistance and Hall effect in a disordered two-dimensional electron gasPhysical Review B, 1980
- Hall Effect in Two-Dimensional Disorderd SystemsJournal of the Physics Society Japan, 1980
- Interaction Effects in Disordered Fermi Systems in Two DimensionsPhysical Review Letters, 1980
- Nonmetallic Conduction in Electron Inversion Layers at Low TemperaturesPhysical Review Letters, 1980
- Negative Magnetoresistance in Silicon (100) MOS Inversion LayersJournal of the Physics Society Japan, 1980
- Possible Explanation of Nonlinear Conductivity in Thin-Film Metal WiresPhysical Review Letters, 1979
- Nonmetallic Conduction in Thin Metal Films at Low TemperaturesPhysical Review Letters, 1979
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- On the dynamics of electrons in an impure metalThe European Physical Journal A, 1974