Second Harmonic Generation of Epitaxially-Grown GaN Crystal

Abstract

The magnitudes of the SHG coefficients, d ₃₁, d ₃₃ and d ₁₅ of GaN and the relative sign of d ₃₁ and d ₃₃ have been measured, using an epitaxially-grown crystal sample. The observed values of d ₃₁/d ₃₃ and d ₁₅/d ₃₃ were -0.48 and -0.58, respectively, and |d ₃₃|=88×|d ₁₁(quartz)|. The reliability of the Maker fringe technique in SHG measurement for an epitaxially-grown sample as thin as 30 µm is discussed from the experimental point of view.