A wideband electrostatic microwave switch fabricated by surface micromachining
- 1 September 2000
- journal article
- research article
- Published by Taylor & Francis in Journal of the Chinese Institute of Engineers
- Vol. 23 (6), 781-787
- https://doi.org/10.1080/02533839.2000.9670599
Abstract
An electrostatic microwave switch has been implemented by applying surface micromachining processes. The substrate of the microwave switch is gallium arsenide (GaAs). The structure of the microwave switch contains a gold coplanar waveguide and a suspended aluminum membrane. The Al membrane is directly anchored to the sidewalls of the GaAs substrate. All processing temperatures are under 350°C. The microwave switch operation is controlled by electrostatic force. The experimental results of the microwave switch show a microwave isolation of ‐40 dB and an insertion loss of ‐0.5 dB in the range of 0.1 to 7 GHz. In addition to demonstrating the design and fabrication of the microwave switch, this work summarizes experimental results.Keywords
This publication has 6 references indexed in Scilit:
- Characteristics of micromachined switches at microwave frequenciesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Micromechanical membrane switches for microwave applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Micromachined membrane filters for microwave and millimeter-wave applications (invited article)International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1997
- Lift-off process for achieving fine-line metallizationJournal of Vacuum Science & Technology B, 1983
- Trilevel lift-off process for refractory metalsJournal of Vacuum Science and Technology, 1982
- Micromechanical Membrane Switches on SiliconIBM Journal of Research and Development, 1979