On the synthesis of A-15 ’’Nb3Si’’ by ion implantation

Abstract

Ion implantation was used to introduce 20 at.% Si into an A‐15 Nb₃Al_0.9Si_0.1 substrate. The surface was depleted of Al by a diffusion anneal. The Al deficiency was replaced with Si by successive implantations. The surface structures were determined from reflection electron diffraction photographs. After depletion and implantation, the sample surfaces had a disordered bcc structure. A subsequent 800 °C anneal transformed these surfaces into A‐15 Nb₃Al_0.2Si_0.8 by epitaxial recrystallization.