Radiative lifetime in GaAs1−xPx p-n junctions
- 1 October 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (7), 382-384
- https://doi.org/10.1063/1.1654927
Abstract
The radiative lifetime in GaAs1−xPx light‐emitting diodes is observed to increase from 2 to 11 nsec with increasing injection level. A related increase in quantum efficiency is also observed. These observations are explained by using a trap‐filling model, where the traps arise from defects in the epitaxially grown GaAs1−xPx.Keywords
This publication has 3 references indexed in Scilit:
- A Cross-Hatch Pattern in GaAs[sub 1−x]P[sub x] Epitaxially Grown on GaAs SubstrateJournal of the Electrochemical Society, 1972
- Studies of photoluminescence in GaAs1−xPx mixed crystalsPhysica Status Solidi (b), 1971
- Optical phase shift measurement of residual defects in vapor epitaxial GaAsPSolid State Communications, 1971