High-power, high-efficiency silicon avalanche diodes at ultra high frequencies

Abstract

Silicon avalanche diodes with a pnn⁺mesa structure were made according to suitably chosen design parameters, and carefully fabricated to meet stringent pedormance specifications. Operating under pulse conditions with a duty factor of approximately 10^-3, efficiencies as high as 25 percent, and power outputs up to 435 watts at 425 megahertz, were achieved.