Properties of Germanium Doped with Manganese

Abstract

The temperature dependence of the electrical resistivity and Hall coefficient in $p$- and $n$-type manganese-doped germanium crystals indicates that manganese introduces two acceptor levels in germanium at 0.16±0.01 ev from the valence band and 0.37±0.02 ev from the conduction band. The distribution coefficient for manganese in germanium is (1.0±0.2)×${10}^{-6\mathrm{}}$. Comparison is made with other fourth-row metals (V, Fe, Co, and Ni) as impurities in germanium.