Transport and optics in quantum wires fabricated by MBE overgrowth on the (110) cleaved edge
- 31 December 1997
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 28 (8-10), 817-823
- https://doi.org/10.1016/s0026-2692(96)00120-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAsMicroelectronics Journal, 1995
- Si δ-doping of 〈011〉-oriented GaAs and AlxGa1−xAs grown by molecular-beam epitaxyApplied Physics Letters, 1994
- Lasing from excitons in quantum wiresPhysical Review Letters, 1993
- Cleaved edge overgrowth for quantum wire fabricationJournal of Crystal Growth, 1993
- Formation of a high quality two-dimensional electron gas on cleaved GaAsApplied Physics Letters, 1990